creat by art - silicon zener diodes - low profile surface-mount package - zener and surge current specification - low leakage current - excellent stability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 part no. with suffix "h" means aec-q101 qualified packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test v f volts r ja c/w r jl c/w t j , t stg c document number: ds_d1409045 version: x15 value - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec bzd27c series taiwan semiconductor 1w, 6.8v - 220v volta g e re g ulator diodes features moisture sensitivity level: level 1, per j-std-020 mechanical data case: sub sma sub sma unit p rsm power dissipation at t l =80c t a =25c (note 1) ptot polarity: indicated by cathode band weight: 19mg (approximately) maximum ratings and electrical characterstics (t a =25c unless otherwise noted) parameter symbol 2.3 1.0 watts non-repetitive peak pulse power dissipation 100 s square pulse (note 2) p zsm 300 watts forward voltage @ i f =0.2a 1.2 p rsm 150 watts non-repetitive peak pulse power dissipation 10/1000 s waveform (bzd27c6v8p to bzd27c100p) 100 watts non-repetitive peak pulse power dissipation 10/1000 s waveform (bzd27c110p to bzd27c220p) note 1: mounted on cu-pad size 5mm x 5mm thermal resistance junction to ambient (note 1) 180 thermal resistance junction to lead 30 operating and storage temperature range -55 to +175
part no. part no. document number: ds_d1409045 version: x15 aec-q101 qualified green compound bzd27c10phrug bzd27c10p h ru g note 1: "xx" defines voltage from 6.8v (bzd27c6v8p) to 220v (bzd27c220p) example preferred part no. part no. suffix packing code packing code suffix description rh sub sma 10,000 / 13" paper reel (12mm tape) mh sub sma 10,000 / 13" plastic reel (12mm tape) r2 sub sma 7,500 / 13" paper reel (12mm tape) m2 sub sma 7,500 / 13" plastic reel (12mm tape) r3 sub sma 1,800 / 7" plastic reel (12mm tape) rf sub sma 3,000 / 7" plastic reel (12mm tape) rq sub sma 10,000 / 13" paper reel (8mm tape) mq sub sma 10,000 / 13" plastic reel (8mm tape) 3,000 / 7" plastic reel (8mm tape) rt sub sma 7,500 / 13" paper reel (8mm tape) mt sub sma 7,500 / 13" plastic reel (8mm tape) package packing bzd27cxxp (note 1) h ru g sub sma 1,800 / 7" plastic reel (8mm tape) rv sub sma bzd27c series taiwan semiconductor ratings and characteristics curves (t a =25c unless otherwise noted) ordering information part no. suffix packing code packing code suffix 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 175 power dissipation(w) ambient temperature( o c) fig.3 power dissipation vs ambient temperature 10 100 1000 10000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 typ. junction capacitance (pf) reverse voltage fig. 2 typ. diode capacitance vs reverse voltage c12p c27p c200p c6v8p 0.1 1 10 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 instantaneous forward current (a) forward voltage (v) fig. 1 typical forward characteristics typ. vf max. vf
test current i zt i r v r ma av min. max. typ. max. min. max. max. bzd27c6v8p d7 6.4 7.2 1 3 0 0.07 100 10 3 bzd27c7v5p d8 7.0 7.9 1 2 0 0.07 100 50 3 bzd27c8v2p d9 7.7 8.7 1 2 0.03 0.08 100 10 3 bzd27c9v1p e0 8.5 9.6 2 4 0.03 0.08 50 10 5 bzd27c10p e1 9.4 10.6 2 4 0.05 0.09 50 7 7.5 bzd27c11p e2 10.4 11.6 4 7 0.05 0.10 50 4 8.2 bzd27c12p e3 11.4 12.7 4 7 0.05 0.10 50 3 9.1 bzd27c13p e4 12.4 14.1 5 10 0.05 0.10 50 2 10 bzd27c15p e5 13.8 15.6 5 10 0.05 0.10 25 1 11 bzd27c16p e6 15.3 17.1 6 15 0.06 0.11 25 1 12 bzd27c18p e7 16.8 19.1 6 15 0.06 0.11 25 1 13 bzd27c20p e8 18.8 21.2 6 15 0.06 0.11 25 1 15 bzd27c22p e9 20.8 23.3 6 15 0.06 0.11 25 1 16 bzd27c24p f0 22.8 25.6 7 15 0.06 0.11 25 1 18 bzd27c27p f1 25.1 28.9 7 15 0.06 0.11 25 1 20 bzd27c30p f2 28 32 8 15 0.06 0.11 25 1 22 bzd27c33p f3 31 35 8 15 0.06 0.11 25 1 24 bzd27c36p f4 34 38 21 40 0.06 0.11 10 1 27 bzd27c39p f5 37 41 21 40 0.06 0.11 10 1 30 bzd27c43p f6 40 46 24 45 0.07 0.12 10 1 33 bzd27c47p f7 44 50 24 45 0.07 0.12 10 1 36 bzd27c51p f8 48 54 25 60 0.07 0.12 10 1 39 bzd27c56p f9 52 56 25 60 0.07 0.12 10 1 43 bzd27c62p g0 58 66 25 80 0.08 0.13 10 1 47 bzd27c68p g1 64 72 25 80 0.08 0.13 10 1 51 bzd27c75p g2 70 79 30 100 0.08 0.13 10 1 56 bzd27c82p g3 77 82 60 200 0.08 0.13 10 1 62 BZD27C91P g4 85 91 60 200 0.08 0.13 5 1 68 bzd27c100p g5 94 106 60 200 0.09 0.13 5 1 75 bzd27c110p g6 104 116 80 250 0.09 0.13 5 1 82 bzd27c120p g7 114 127 150 300 0.09 0.13 5 1 91 bzd27c130p g 124 141 150 300 0.09 0.13 5 1 100 bzd27c150p g9 138 156 150 300 0.09 0.13 5 1 110 bzd27c160p h0 153 171 150 350 0.09 0.13 5 1 120 bzd27c180p h1 168 191 280 450 0.09 0.13 5 1 130 bzd27c200p h2 188 212 350 750 0.09 0.13 5 1 150 bzd27c220p h3 208 233 430 900 0.09 0.13 5 1 160 notes: 1. pulse test: tp Q 5ms. document number: ds_d1409045 version: x15 r dif @ i z device device marking code working voltage (note 1) v z @ i zt v bzd27c series taiwan semiconductor reverse current@ reverse voltage alph z @ i z ? temperature coefficient %/c differential resistance
v (br) @i test i test vc @i rsm (note 1) i r @v wm vma v a av min. min. max max. max. bzd27c7v5p 7 100 0.00 0.07 11.3 13.3 1500 6.2 bzd27c8v2p 7.7 100 0.03 0.08 12.3 12.2 1200 6.8 bzd27c9v1p 8.5 50 0.03 0.08 13.3 11.3 100 7.5 bzd27c10p 9.4 50 0.05 0.09 14.8 10.1 20 8.2 bzd27c11p 10.4 50 0.05 0.10 15.7 9.6 5 9.1 bzd27c12p 11.4 50 0.05 0.10 17.0 8.8 5 10 bzd27c13p 12.4 50 0.05 0.10 18.9 7.9 5 11 bzd27c15p 13.8 50 0.05 0.10 20.9 7.2 5 12 bzd27c16p 15.3 25 0.06 0.11 22.9 6.6 5 13 bzd27c18p 16.8 25 0.06 0.11 25.6 5.9 5 15 bzd27c20p 18.8 25 0.06 0.11 28.4 5.3 5 16 bzd27c22p 20.8 25 0.06 0.11 31.0 4.8 5 18 bzd27c24p 22.8 25 0.06 0.11 33.8 4.4 5 20 bzd27c27p 25.1 25 0.06 0.11 38.1 3.9 5 22 bzd27c30p 28 25 0.06 0.11 42.2 3.6 5 24 bzd27c33p 31 25 0.06 0.11 46.2 3.2 5 27 bzd27c36p 34 10 0.06 0.11 50.1 3.0 5 30 bzd27c39p 37 10 0.06 0.11 54.1 2.8 5 33 bzd27c43p 40 10 0.07 0.12 60.7 2.5 5 36 bzd27c47p 44 10 0.07 0.12 65.5 2.3 5 39 bzd27c51p 48 10 0.07 0.12 70.8 2.1 5 43 bzd27c56p 52 10 0.07 0.12 78.6 1.9 5 47 bzd27c62p 58 10 0.08 0.13 86.5 1.7 5 51 bzd27c68p 64 10 0.08 0.13 94.4 1.6 5 56 bzd27c75p 70 10 0.08 0.13 103.5 1.5 5 62 bzd27c82p 77 10 0.08 0.13 114 1.3 5 68 BZD27C91P 85 5 0.09 0.13 126 1.2 5 75 bzd27c100p 94 5 0.09 0.13 139 1.1 5 82 bzd27c110p 104 5 0.09 0.13 150 1.0 5 91 bzd27c120p 114 5 0.09 0.13 152 0.65 5 100 bzd27c130p 124 5 0.09 0.13 185 0.81 5 110 bzd27c150p 138 5 0.09 0.13 205 0.73 5 120 bzd27c160p 153 5 0.09 0.13 224 0.67 5 130 bzd27c180p 168 5 0.09 0.13 229 0.43 5 150 bzd27c200p 188 5 0.09 0.13 254 0.39 5 160 bzd27c220p 208 5 0.09 0.13 279 0.35 5 176 notes: 1. non-repetitive peak reverse current in accordance with "iec 60-1, section 8" (10/1000 s pulse) document number: ds_d1409045 version: x15 bzd27c series taiwan semiconductor reverse current@ stand-off voltage device alphz@i test %/c rev. breakdown voltage test current temperature coefficient clamping voltage
min max min max b 1.70 1.90 0.067 0.075 c 2.70 2.90 0.106 0.114 d 0.16 0.30 0.006 0.012 e 1.23 1.43 0.048 0.056 f 0.80 1.20 0.031 0.047 g 3.40 3.80 0.134 0.150 h 2.45 2.60 0.096 0.102 i 0.35 0.85 0.014 0.033 j 0.00 0.10 0.000 0.004 p/n = marking code g = green compound code yw = date code f = factory code document number: ds_d1409045 version: x15 bzd27c series taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) sub sma 1.9 e4.3 suggested pad layout symbol unit (mm) a1.4 b1.2 marking diagram unit (inch) 0.055 0.047 0.122 0.075 0.169 c3.1 d
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